Crystalline Semiconductor Film, Plate-Like Body and Semiconductor Device

ABSTRACT

A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

TECHNICAL FIELD

The present invention relates to a crystalline semiconductor film and a sheet like object that are useful for a semiconductor device and a semiconductor device using the crystalline semiconductor film or the sheet like object.

BACKGROUND ART

As a switching device of the next generation achieving high withstand voltage, low losses, and high temperature resistance, semiconductor devices using gallium oxide (Ga₂O₃) with a large band gap attract attention and are expected to be applied to power semiconductor devices, such as an inverter. According to NPL 1, such gallium oxide has a band gap that may be controlled by forming mixed crystal with indium or aluminum singly or in combination. Among all, InAlGaO-based semiconductors represented by In_(x′)Al_(y′)Ga_(z′)O₃ (0≤X′≤2, 0≤Y′≤2, 0≤Z′≤2, X′+Y′+Z′=1.5 to 2.5) are extremely attractive materials.

PTL 1 describes a highly crystalline conductive α-Ga₂O₃ thin film with an added dopant (tetravalent tin). The thin film in PTL 1 is, however, not capable of maintaining sufficient withstand voltage. This film also contains many carbon impurities and has unsatisfactory semiconductor properties including conductivity, so that the film is difficult to be used for a semiconductor device.

PTL 2 describes a Ga₂O₃-based semiconductor element with a p type α-(Al_(x″)Ga_(1-x″))₂O₃ single crystal film formed on an α-Al₂O₃ substrate. The semiconductor element in PTL 2, however, has many constraints to be applied to a semiconductor element due to α-Al₂O₃ being an insulator and the crystal quality with some problems. The MBE technique requires ion implantation and heat treatment at high temperatures to obtain a p type semiconductor. The p type α-Al₂O₃ itself is accordingly difficult to be achieved, and in reality, the semiconductor element in PTL 2 itself is difficult to be achieved.

NPL 2 also describes that an α-Ga₂O₃ thin film can be formed on sapphire by the MBE technique. The description, however, mentions that the crystal grows up to a film thickness of 100 nm at a temperature of 450° C. or less while the quality of the crystal becomes poor with a film thickness more than that and a film with a film thickness of 1 μm or more cannot be obtained.

There is therefore an expectation of an α-Ga₂O₃ thin film with a film thickness of 1 μm or more and having undegraded crystal quality.

PTL 3 describes a method of manufacturing a crystalline oxide thin film by mist CVD using bromide or iodide of gallium or indium.

PTLs 4 to 6 describe a multilayer structure having a semiconductor layer with a corundum crystal structure and an insulating film with a corundum crystal structure, both laminated on a base substrate with a corundum crystal structure.

PTLs 3 to 6 are publications on patents or patent applications by the present applicant, and at the time of each application, a crystalline thin film having a film thickness of 1 μm or more was not yet able to be obtained. In addition, all films obtained in the methods of PTLs 3 to 6 were not able to be peeled off from the substrate in reality.

CITATION LIST Patent Literature

PTL 1: JP 2013-28480A

PTL 2: JP 2013-58637A

PTL 3: Japanese Patent No. 5397794

PTL 4: Japanese Patent No. 5343224

PTL 5: Japanese Patent No. 5397795

PTL 6: JP 2014-72533A

Non Patent Literature

NPL 1: Kaneko, Kentaro, “Fabrication and physical properties of corundum structured alloys based on gallium oxide”, Dissertation, Kyoto Univ., March 2013

NPL 2: Raveen Kumaran, “New Solid State Laser Crystals Created by Epitaxial Growth”, A thesis submitted for the degree of doctor of philosophy, The University of British Columbia, September 2012

SUMMARY OF THE INVENTION Technical Problem

It is an object of the present invention to provide a semiconductor film, a sheet like object, and a semiconductor device that have inhibited semiconductor properties, particularly leakage current, and have excellent withstand voltage and heat dissipation.

Solution to Problem

As a result of keen examination to achieve the object, the present inventors have successfully invented a crystalline semiconductor film, including a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 μm or more.

In addition, the present inventors have made further research to successfully manufacture a sheet like object, including a corundum structured oxide semiconductor as a major component.

Still in addition, the present inventors manufactured a semiconductor device using the crystalline semiconductor film or the sheet like object and found that the semiconductor device thus obtained had inhibited leakage current and had excellent withstand voltage and heat dissipation, and after learning the above various findings, have made further research to complete the present invention.

Advantageous Effects of Invention

The crystalline semiconductor film and the sheet like object of the present invention are excellent in semiconductor properties and the semiconductor device of the present invention has inhibited leakage current and is excellent in withstand voltage and heat dissipation.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram schematically illustrating a preferred example of a Schottky barrier diode (SBD) of the present invention.

FIG. 2 is a diagram schematically illustrating another preferred example of a Schottky barrier diode (SBD) of the present invention.

FIG. 3 is a diagram schematically illustrating still another preferred example of a Schottky barrier diode (SBD) of the present invention.

FIG. 4 is a diagram schematically illustrating a preferred example of a metal semiconductor field effect transistor (MESFET) of the present invention.

FIG. 5 is a diagram schematically illustrating a preferred example of a high electron mobility transistor (HEMT) of the present invention.

FIG. 6 is a diagram schematically illustrating a preferred example of a metal oxide semiconductor field effect transistor (MOSFET) of the present invention.

FIGS. 7A to 7C show schematic views illustrating part of a procedure of manufacturing the metal oxide semiconductor field effect transistor (MOSFET) in FIG. 6.

FIG. 8 is a diagram schematically illustrating an example of a metal oxide semiconductor field effect transistor (MOSFET) of the present invention.

FIG. 9 is a diagram schematically illustrating a preferred example of a static induction transistor (SIT) of the present invention.

FIG. 10 is a diagram schematically illustrating another preferred example of a Schottky barrier diode (SBD) of the present invention.

FIG. 11 is a diagram schematically illustrating another preferred example of a Schottky barrier diode (SBD) of the present invention.

FIG. 12 is a diagram schematically illustrating another preferred example of a high electron mobility transistor (HEMT) of the present invention.

FIG. 13 is a diagram schematically illustrating another preferred example of a metal oxide semiconductor field effect transistor (MOSFET) of the present invention.

FIG. 14 is a diagram schematically illustrating a preferred example of a junction field effect transistor (JFET) of the present invention.

FIG. 15 is a diagram schematically illustrating a preferred example of an insulated gate bipolar transistor (IGBT) of the present invention.

FIG. 16 is a diagram schematically illustrating a preferred example of a light emitting device (LED) of the present invention.

FIG. 17 is a diagram schematically illustrating another preferred example of a light emitting device (LED) of the present invention.

FIG. 18 is a configuration diagram of a mist CVD apparatus used in Example.

FIGS. 19A to 19B show diagrams illustrating a susceptor used in Example.

FIG. 20 is a diagram illustrating relationship between cross sectional areas of the susceptor and a supply pipe used in Example.

FIG. 21 is a graph illustrating relationship between a dopant content ratio in the liquid and a germanium content in the film in Example of the present invention.

FIG. 22 is a diagram illustrating a structure of a Schottky barrier diode (SBD) in Example.

FIG. 23 is a diagram illustrating a result of SIMS analysis of a germanium doped semiconductor layer in Example.

FIG. 24 is a diagram illustrating a result of SIMS analysis of a silicon doped semiconductor layer in Example.

FIG. 25 is a diagram illustrating an X-ray diffraction image of a free-standing film obtained in Example.

FIG. 26 is a diagram illustrating a structure of another Schottky barrier diode (SBD) in Example.

FIG. 27 is a diagram illustrating current-voltage characteristics of an SBD obtained in Example.

FIG. 28 is a diagram illustrating a structure of an MESFET fabricated in Example.

FIG. 29 is a diagram illustrating DC characteristics of the MESFET fabricated in Example, where the ordinate represents a drain current (A) and the abscissa represents a drain voltage (V).

FIG. 30 is a schematic block diagram of a mist CVD apparatus used in Examples.

FIG. 31 is a diagram illustrating results of forward current-voltage characteristics evaluation in Example.

FIG. 32 is a diagram illustrating results of reverse current-voltage characteristics evaluation in Example.

FIG. 33 is a diagram illustrating results of XRD in Example.

FIG. 34 illustrates a photograph of a film in Example.

FIG. 35 illustrates another photograph of a film in Example.

DESCRIPTION OF EMBODIMENTS

A crystalline semiconductor film of the present invention is a crystalline semiconductor film, including a corundum structured oxide semiconductor as a major component, and the crystalline semiconductor film is not particularly limited as long as the film has a film thickness of 1 μm or more. In the present invention, the film thickness is preferably 2 μm or more, more preferably 3 μm or more, and most preferably 5 μm or more.

In the present invention, the semiconductor film preferably has a film thickness of 7.6 μm or more. A film thickness of 7.6 μm or more enables free standing of the crystalline semiconductor film. In the present invention, the film more preferably has a film thickness of 10 μm or more and is most preferably a multilayer film having a film thickness of 10 μm or more, in which the layers contain the same major component (e.g., a laminate of an n− type semiconductor layer and an n+ type semiconductor layer) because the semiconductor properties are improved more. The shape of the the crystalline semiconductor film is not particularly limited, but may be a quadrangular, circular, or polygonal or the like. The surface area of the crystalline semiconductor film in the present invention is not particularly limited, but preferably 3 mm square or more (9 mm² or more), more preferably 5 mm square or more (25 mm² or more), and most preferably a diameter of 50 mm or more. In the present invention, use of mist CVD in specific conditions enables easy production of the crystalline semiconductor film of 3 mm square or more, which has not been achieved conventionally.

The crystalline semiconductor film may be a single crystal film or may be a polycrystalline film. In the present invention, the crystalline semiconductor film is preferably a single crystal film that may contain polycrystal. The oxide semiconductor is not particularly limited as long as the semiconductor is a corundum structured oxide semiconductor. Examples of the oxide semiconductor include a metal oxide semiconductor or the like containing one or more types of metal selected from Al, Ga, In, Fe, Cr, V, Ti, Rh, Ni, and Co and the like. In the present invention, the oxide semiconductor preferably contains one or more elements selected from indium, aluminum, and gallium as major components, more preferably contains at least indium or/and gallium as major components, and most preferably contains at least gallium as a major component. In the present invention, “containing as a major component” means to contain the corundum structured oxide semiconductor at an atomic ratio of preferably 50% or more based on the entire components of the crystalline semiconductor film, more preferably 70% or more, and even more preferably 90% or more, and also means that the semiconductor may be contained at 100%.

In the present invention, the oxide semiconductor is preferably a type In_(x)Al_(y)Ga_(z)O₃ (0≤X≤2, 0≤Y≤2, 0≤Z≤2, X+Y+Z=1.5 to 2.5 and 0<X or 0<Z). Preferred composition of a type In_(x)Al_(y)Ga_(z)O₃ as the oxide semiconductor is not particularly limited as long as the objects of the present invention are not impaired. A total atomic ratio of gallium, indium, and aluminum in the metal elements contained in the crystalline semiconductor film is preferably 0.5 or more and more preferably 0.8 or more. Preferred composition of the oxide semiconductor containing gallium is preferably at an atomic ratio of gallium of 0.5 or more in the metal elements contained in the crystalline semiconductor film and more preferably 0.8 or more.

In the crystalline semiconductor film, a dopant may be contained. The dopant is not particularly limited as long as the objects of the present invention are not impaired. Examples of the dopant include n type dopants, such as tin, germanium, silicon, titanium, zirconium, vanadium, and niobium, p type dopants, or the like. The dopant concentration may be generally approximately from 1×10¹⁶/cm³ to 1×10²²/cm³. The dopant concentration may be at low concentration of, for example, approximately 1×10¹⁷/cm³ or less to make an n− type semiconductor or the like in the case of, for example, an n type dopant. Further, according to the present invention, the dopant may be contained at high concentration of approximately 1×10²⁰/cm³ or more to make an n+ type semiconductor or the like in the case of, for example, an n type dopant. In the present invention, the n type dopant is preferably germanium, silicon, titanium, zirconium, vanadium, or niobium. For formation of an n− type semiconductor layer, the concentration of germanium, silicon, titanium, zirconium, vanadium, or niobium in the crystalline semiconductor film is preferably approximately from 1×10¹³ to 5×10¹⁷/cm³ and more preferably approximately from 1×10¹⁵ to 1×10¹⁷/cm³. For formation of an n+ type semiconductor layer using germanium, silicon, titanium, zirconium, vanadium, or niobium as the n type dopant, the concentration of germanium, silicon, titanium, zirconium, vanadium, or niobium in the crystalline semiconductor film is preferably approximately from 1×10²⁰/cm³ to 1×10²³/cm³ and more preferably approximately from 1×10²⁰/cm³ to 1×10²¹/cm³. Germanium, silicon, titanium, zirconium, vanadium, or niobium is thus contained in the crystalline semiconductor film to make a crystalline semiconductor film more excellent in electrical characteristics than the case of using tin as the dopant.

The crystalline semiconductor film may be formed directly on a base substrate or may be formed via another layer. Examples of such another layer include a corundum structured crystalline thin film of another composition, a crystalline thin film with of a structure other than the corundum structure, an amorphous thin film, or the like. The structure may be a single layer structure or may be a multilayer structure. One layer may have two or more crystal phases mixed therein. In the case of having a multilayer structure, the crystalline semiconductor film in the present invention is configured by laminating, for example, an insulating thin film and a conductive thin film, but not limited. In the multilayer structure configured by laminating an insulating thin film and a conductive thin film, the insulating thin film and the conductive thin film may have the same composition or compositions different from each other. The thickness ratio of the conductive thin film to the insulating thin film is not particularly limited, and the ratio of (thickness of the conductive thin film)/(thickness of the insulating thin film) is preferably, for example, from 0.001 to 100 and more preferably from 0.1 to 5. The more preferred ratio is specifically, for example, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9, 2, 3, 4, and 5 and may range between any two values listed here.

In the present invention, by mist CVD using, for example, a susceptor illustrated in FIGS. 19A to 19B and 20, an abnormal grain inhibitor, or the like, the crystalline semiconductor film may be laminated directly on the base substrate or via another layer.

<Base Substrate>

The base substrate is not particularly limited as long as it becomes a support for the crystalline semiconductor film. While the base substrate may be an insulating substrate, a semiconductor substrate, or a conductive substrate, it is preferably an insulating substrate and also preferably a substrate having a metal film on a surface. In the present invention, the base substrate is also preferably a substrate containing corundum structured crystals as a major component or a substrate containing β-gallic structured crystals as a major component. The substrate containing corundum structured crystals as a major component is not particularly limited as long as the substrate contains corundum structured crystals at a composition ratio in the substrate of 50% or more. In the present invention, the crystals are preferably contained at 70% or more and more preferably at 90% or more. Examples of the substrate containing corundum structured crystals as a major component include a sapphire substrate (e.g., c-plane sapphire substrate), an a type gallium oxide substrate, or the like. The substrate containing β-gallic structured crystals as a major component is not particularly limited as long as the substrate contains the β-gallic structured crystals at a composition ratio in the substrate of 50% or more. In the present invention, the crystals are preferably contained at 70% or more and more preferably at 90% or more. Examples of the substrate containing β-gallic structured crystals as a major component include a β-Ga₂O₃ substrate, a mixed crystal substrate containing Ga₂O₃ and Al₂O₃ where Al₂O₃ is more than 0 wt % and 60 wt % or less, or the like. Examples of other base substrates include hexagonal structured substrates (e.g., SiC substrate, ZnO substrate, GaN substrate), or the like. The crystalline semiconductor film is preferably formed directly on the hexagonal structured substrate or via another layer (e.g., buffer layer, etc.). The thickness of the base substrate in the present invention is not particularly limited, but preferably from 50 to 2000 μm and more preferably from 200 to 800 μm.

In the case of the base substrate having a metal film on a surface, the metal film may be provided on all or part of a substrate surface and the metal film may be provided in a mesh or dotted form. The thickness of the metal film is not particularly limited, but preferably from 10 to 1000 nm and more preferably from 10 to 500 nm. Examples of the component material for the metal film include metal, such as platinum (Pt), gold (Au), palladium (Pd), silver (Ag), chromium (Cr), copper (Cu), iron (Fe), tungsten (W), titanium (Ti), tantalum (Ta), niobium (Nb), manganese (Mn), molybdenum (Mo), aluminum (Al), and hafnium (Hf), alloys thereof, or the like. The metal is preferably uniaxially oriented. The uniaxially oriented metals include any metals whose crystal orientation is directed to a specific direction (the film thickness direction and the film in-plane direction, the film thickness direction), and include metals which are oriented preferentially to one axis. In the present invention, the orientation is preferably uniaxial in the film thickness direction. Whether the orientation is uniaxial may be confirmed by X-ray diffraction. For example, the uniaxial orientation may be determined when an integrated intensity ratio of a peak derived from a uniaxially oriented crystal face to a peak derived from another crystal face is greater (preferably not less than twice greater and more preferably not less than an order of magnitude greater) compared with an integrated intensity ratio of a peak derived from a uniaxially oriented crystal face of randomly oriented powder of the same crystal to a peak derived from another crystal face.

In the present invention, the base substrate is preferably a sapphire substrate (e.g., c-plane sapphire substrate), an a type gallium oxide substrate, a β-Ga₂O₃ substrate, a mixed crystal substrate containing Ga₂O₃ and Al₂O₃ where Al₂O₃ is more than 0 wt % and 60 wt % or less, or any of these substrates having a metal film formed on a surface. Use of such a preferred base substrate enables more reduction in the carbon content ratio, the carrier concentration, and the half width of the impurities in the crystalline semiconductor film compared with the case of using another base substrate.

The mist CVD is not particularly limited as long as the film formation method includes, (1) a step of atomizing a raw material, for example, using an ultrasonic vibration transducer to produce mist, (2) a step of supplying a carrier gas, and (3) a step of delivering the mist to the base substrate retained by the susceptor with the carrier gas for film formation. More specific examples of the method of producing mist include mist epitaxy, mist CVD, or the like.

The step (1) is not particularly limited as long as a raw material is atomized to produce mist. For the step (1), a mist generator may be used that atomizes the raw material to produce mist. The mist generator is not particularly limited as long as the generator is capable of atomizing the raw material to produce mist. The generator may be a known one while, in the present invention, the generator preferably atomizes the raw material to produce mist using ultrasonic waves. The raw material is described later.

The step (2) is not particularly limited as long as a carrier gas is supplied. The carrier gas is not particularly limited as long as it is gaseous and capable of delivering the mist produced by atomizing the raw material onto a substrate. Examples of the carrier gas are not particularly limited, but include an oxygen gas, a nitrogen gas, an argon gas, a forming gas, or the like.

The step (3) is not particularly limited as long as the mist is delivered to the base substrate retained by a susceptor using the carrier gas for film formation. For the step (3), a tube furnace may be preferably used that is capable of delivering the mist to the substrate using the carrier gas for film formation in the supply pipe.

In the present invention, for film formation in the supply pipe in the step (3), the crystalline semiconductor film is preferably formed using a susceptor illustrated in, for example, FIGS. 19 and 20 as the susceptor mentioned above.

FIGS. 19A to 19B illustrate an embodiment of the susceptor. A susceptor 51 illustrated in FIGS. 19A to 19B is provided with a mist accelerator 52, a substrate holder 53, and a support unit 54. The support unit 54 is in a rod shape and configured to have a contact angle of the support unit 54 with a supply pipe 55 of approximately 90° by changing the angle of the unit at some point. Although such configuration improves the stability of the susceptor 51, the shape of the support unit 54 in the present invention is not particularly limited and various shapes may be applied as appropriate.

FIG. 19A illustrates a cross section inside the supply pipe toward the substrate in the direction from upstream to downstream of the mist. It is seen from the drawing that the substrate-side surface of the susceptor has an outer circumference in a semicircular shape, which is a shape approximately identical to the inner circumference of the supply pipe. FIG. 19B illustrates cross sections of the supply pipe, the substrate, and the susceptor taking the upstream of the mist on the left and the downstream on the right. Although the mist is prone to precipitate in the supply pipe due to its properties, the susceptor 51 is configured to have the inclined mist accelerator 52 to raise the precipitated mist by acceleration, thereby delivering the mist onto the substrate.

FIG. 20 illustrates, in the supply pipe 55, a region for the susceptor and the substrate illustrated in FIGS. 19A to 19B as a substrate-susceptor region 61 and a region to exhaust unreacted mist as an exhaust region 62, showing the relationship between a total area of the susceptor and the substrate and an area of the exhaust region. In the present invention, as illustrated in FIG. 20, in the cross section inside the supply pipe divided into a susceptor region occupied by the susceptor, a region for the substrate, and the exhaust region to exhaust unreacted mist, the total area of the susceptor region and the substrate is preferably greater than the area of the exhaust region. Use of such a preferred susceptor enables acceleration of the mist on the substrate to obtain a more homogeneous and thicker crystalline semiconductor film.

For the crystalline semiconductor film formation, a dopant may be used to perform doping. In the present invention, doping is generally performed by incorporating an abnormal grain inhibitor into the raw material. The doping by incorporating an abnormal grain inhibitor into the raw material enables production of a crystalline semiconductor film excellent in surface smoothness. The amount of doping is not particularly limited as long as the objects of the present invention are not impaired, and preferably at a molar ratio from 0.01 to 10% in the raw material and more preferably from 0.1 to 5%.

The abnormal grain inhibitor means to have an effect of inhibiting by-product particles in the film formation process. The inhibitor is not particularly limited as long as the crystalline semiconductor film has a surface roughness (Ra) of, for example, 0.1 μm or less. In the present invention, the abnormal grain inhibitor is preferably made from at least one selected from Br, I, F, and Cl. For stable film formation, introduction of Br or I in the film as the abnormal grain inhibitor enables inhibition of deterioration of the surface roughness due to abnormal grain growth. Although the amount of the abnormal grain inhibitor is not particularly limited as long as abnormal grains are inhibited, the amount is preferably 50% or less at a volume ratio in a raw-material solution, more preferably 30% or less, and most preferably in a range from 1 to 30%. Use of the abnormal grain inhibitor in such a preferred range enables its function as an abnormal grain inhibitor, and the abnormal grain growth in the crystalline semiconductor film is thus inhibited to smooth the surface.

A method of forming a crystalline semiconductor film is not particularly limited as long as the objects of the present invention are not impaired. The film may be formed by reaction of a raw material by combining, for example, a gallium compound with an indium compound, an aluminum compound, or the like as desired in accordance with the composition of the crystalline semiconductor film. This enables crystal growth of the crystalline semiconductor film on the base substrate from the base substrate side. The gallium compound may be a product using gallium metal as starting material to be changed into a gallium compound immediately before film formation. Examples of the gallium compound include organic metal complexes (e.g., acetyl acetylacetonato complex, etc.), halides (e.g., fluoride, chloride, bromide, iodide, etc.), or the like of gallium, and in the present invention, a halide (e.g., fluoride, chloride, bromide, iodide, etc.) is preferably used. Film formation by mist CVD using a halide as the raw material compound enables substantial exclusion of carbon from the crystalline semiconductor film.

More specifically, the crystalline semiconductor film may be formed by supplying raw material microparticles generated from a raw-material solution in which a raw material compound is dissolved to a film formation chamber and reacting the raw material compound in the film formation chamber using the susceptor. The solvent of the raw-material solution is not particularly limited, but preferably water, a hydrogen peroxide solution, or an organic solvent. In the present invention, the raw material compound is generally reacted in the presence of a dopant raw material. The dopant raw material is preferably incorporated in the raw-material solution to be microparticulated together with or separately from the raw material compound. The amount of carbon contained in the crystalline semiconductor film is thus less than that in the dopant, and preferably carbon is not substantially contained in the crystalline semiconductor film. The crystalline semiconductor film of the present invention also preferably contains halogen (preferably Br) to form a good semiconductor structure. Examples of the dopant raw material include simple substances of metal, such as germanium, silicon, titanium, zirconium, vanadium, and niobium, compounds thereof (e.g., halides, oxides, etc.), or the like.

Film formation as above enables industrially advantageous production of a crystalline semiconductor film having a film thickness of 1 μm or more. In the present invention, the film thickness of 1 μm or more may be formed by appropriately adjusting film formation time.

In the present invention, annealing may be performed after film formation. The temperature for annealing is not particularly limited, but preferably 600° C. or less and more preferably 550° C. or less. Annealing at such a preferred temperature more preferably enables adjustment of the carrier concentration in the crystalline semiconductor film. While the annealing time is not particularly limited as long as the objects of the present invention are not impaired, the time is preferably from 10 seconds to 10 hours and more preferably from 10 seconds to 1 hour.

The base substrate may be peeled off from the crystalline semiconductor film. The peeling means is not particularly limited as long as the objects of the present invention are not impaired and may be known means. Examples of the peeling means include means of peeling by applying mechanical impact, means of peeling by applying heat to utilize thermal stress, means of peeling by applying vibration, such as ultrasonic waves, means of peeling by etching, or the like. Such peeling enables production of the crystalline semiconductor film as a free-standing film.

For the base substrate having a metal film formed on a surface, peeling may be subjected only to the substrate portion and the metal film may remain on the semiconductor layer surface. The metal film remained on the semiconductor layer surface enables facilitation and improvement of electrode formation on the semiconductor surface.

The film formation may be repeated, and the repeat of film formation allows the film thickness to be thicker and also enables production of a sheet like object containing the corundum structured oxide semiconductor as a major component. In the present invention, a crystalline semiconductor film may be formed again on the free-standing film.

In the present invention, the above film formation enables production of a sheet like object having a thickness of 7.6 μm or more, preferably 10 μm or more, more preferably 15 μm or more, and most preferably 50 μm or more. The sheet like object is allowed to be used not only as a semiconductor layer but also as a substrate.

The crystalline semiconductor film and the sheet like object have a semiconductor structure useful for a semiconductor device. In the present invention, the crystalline semiconductor film or the sheet like object may be used for a semiconductor device as a semiconductor structure directly or by further treating, such as processing, as desired. When the semiconductor structure is used for a semiconductor device, the semiconductor structure of the present invention may be directly used for the semiconductor device or may be used by further forming another layer (e.g., insulating layer, semi-insulating layer, semiconductor layer, buffer layer, intermediate layer, etc.) or the like.

The semiconductor structure of the present invention is useful for a semiconductor device and is particularly useful for a power device. Semiconductor devices may be classified into lateral elements (lateral devices) having electrodes formed on one side of the semiconductor layer and vertical elements (vertical devices) having electrodes respectively on both sides of front and rear of the semiconductor layer. In the present invention, the semiconductor structure may be preferably used for a lateral device and a vertical device, and among all, the structure is preferably used for a vertical device. Examples of the semiconductor device include a Schottky barrier diode (SBD), a metal semiconductor field effect transistor (MESFET), a high electron mobility transistor (HEMT), a metal oxide semiconductor field effect transistor (MOSFET), a static induction transistor (SIT), a junction field effect transistor (JFET), an insulated gate bipolar transistor (IGBT), a light emitting diode, or the like. In the present invention, the semiconductor device is preferably an SBD, a MOSFET, an SIT, a JFET, or an IGBT and more preferably an SBD, a MOSFET, or an SIT. In the present invention, the semiconductor device may exclude a p type semiconductor layer.

The following descriptions are given to preferred examples of a crystalline semiconductor film with the semiconductor structure applied to an n type semiconductor layer (n+ type semiconductor, n− type semiconductor, etc.) with reference to the drawings while the present invention is not limited to these examples. As long as the objects of the present invention are not impaired, the semiconductor devices listed below may contain still another layer (e.g., insulating layer, semi-insulating layer, conductor layer, semiconductor layer, buffer layer, intermediate layer, etc.) and also a buffer layer may be omitted appropriately.

(SBD)

FIG. 1 illustrates an example of a Schottky barrier diode (SBD) according to the present invention. The SBD in FIG. 1 is provided with an n− type semiconductor layer 101 a, an n+ type semiconductor layer 101 b, a Schottky electrode 105 a, and an ohmic electrode 105 b.

Materials for the Schottky electrode and the ohmic electrode may be known electrode materials. Examples of such an electrode material include metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like.

The Schottky electrode and the ohmic electrode may be formed by known means, such as vacuum deposition and sputtering, for example. More specifically, the Schottky electrode may be formed by, for example, laminating a layer of Mo and a layer of Al and patterning the layer of Mo and the layer of Al using a photolithography technique.

When reverse bias is applied to the SBD in FIG. 1, a depletion layer, not shown, expands in the n type semiconductor layer 101 a to make a high voltage SBD. When forward bias is applied, electrons flow from the ohmic electrode 105 b to the Schottky electrode 105 a. The SBD thus using the semiconductor structure is excellent for high voltage and high current applications, achieves high switching speed, and excellent in withstand voltage and reliability.

FIG. 2 illustrates another example of a Schottky barrier diode (SBD) according to the present invention. In addition to the configuration of the SBD in FIG. 1, the SBD in FIG. 2 is further provided with an insulating layer 104. More specifically, this SBD is provided with an n− type semiconductor layer 101 a, an n+ type semiconductor layer 101 b, a Schottky electrode 105 a, an ohmic electrode 105 b, and an insulating layer 104.

Examples of a material for the insulating layer 104 include GaO, AlGaO, InAlGaO, AlInZnGaO₄, AN, Hf₂O₃, SiN, SiON, Al₂O₃, MgO, GdO, SiO₂, Si₃N₄, or the like. In the present invention, the material preferably has a corundum structure. Use of the corundum structured insulator for the insulating layer enables good development of the functions of semiconductor properties at the interface. The insulating layer 104 is provided between the n− type semiconductor layer 101 a and the Schottky electrode 105 a. The insulating layer may be formed by known means, such as sputtering, vacuum deposition, and CVD, for example.

Formation, materials, or the like for the Schottky electrode and the ohmic electrode are same as those in the case of the SBD in FIG. 1 above. The electrodes may be formed by known means, such as sputtering, vacuum deposition, and CVD, for example, and made from metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like.

The SBD in FIG. 2 has, compared with the SBD in FIG. 1, even more excellent in insulating properties and higher current controllability.

FIG. 3 illustrates still another SBD example of a Schottky barrier diode (SBD) according to the present invention. The SBD in FIG. 3 is greatly different from the configuration of the SBDs in FIGS. 1 and 2 in the points of having a trench structure and including a semi-insulating layer 103. The SBD in FIG. 3 is provided with an n− type semiconductor layer 101 a, an n+ type semiconductor layer 101 b, a Schottky electrode 105 a, an ohmic electrode 105 b, and the semi-insulating layer 103. This SBD is capable of great reduction in leakage current and great reduction in on resistance while maintaining the withstand voltage.

The semi-insulating layer 103 may be configured with a semi-insulator. Examples of the semi-insulator include those containing a semi-insulator dopant, such as magnesium (Mg), ruthenium (Ru), iron (Fe), beryllium (Be), cesium (Cs), strontium, and barium, those undoped, or the like.

(MESFET)

FIG. 4 illustrates an example of a metal semiconductor field effect transistor (MESFET) according to the present invention. The MESFET in FIG. 4 is provided with an n− type semiconductor layer 111 a, an n+ type semiconductor layer 111 b, a buffer layer 118, a semi-insulating layer 114, a gate electrode 115 a, a source electrode 115 b, and a drain electrode 115 c.

Materials for the gate electrode, the drain electrode, and the source electrode may be known electrode materials. Examples of the electrode materials include metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like. The gate electrode, the drain electrode, and the source electrode may be formed by known means, such as vacuum deposition and sputtering, for example.

The semi-insulating layer 114 may be configured with a semi-insulator. Examples of the semi-insulator include those containing a semi-insulator dopant, such as magnesium (Mg), ruthenium (Ru), iron (Fe), beryllium (Be), cesium (Cs), strontium, and barium, those undoped, or the like.

In the MESFET in FIG. 4, a good depletion layer is formed under the gate electrode, and the current flowing from the drain electrode to the source electrode is thus efficiently controlled.

(HEMT)

FIG. 5 illustrates an example of a high electron mobility transistor (HEMT) according to the present invention. The HEMT in FIG. 5 is provided with an n type semiconductor layer 121 a with a wide band gap, an n type semiconductor layer 121 b with a narrow band gap, an n+ type semiconductor layer 121 c, a semi-insulating layer 124, a buffer layer 128, a gate electrode 125 a, a source electrode 125 b, and a drain electrode 125 c.

Materials for the gate electrode, the drain electrode, and the source electrode may be respective known electrode materials. Examples of the electrode materials include metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like. The gate electrode, the drain electrode, and the source electrode may be formed by known means, such as vacuum deposition and sputtering, for example.

The n type semiconductor layers under the gate electrode are configured at least with the layer 121 a with a wide band gap and the layer 121 b with a narrow band gap and the semi-insulating layer 124 is configured with a semi-insulator. Examples of the semi-insulator include those containing a semi-insulator dopant, such as ruthenium (Ru) and iron (Fe), those undoped, or the like.

In the HEMT in FIG. 5, a good depletion layer is formed under the gate electrode, and the current flowing from the drain electrode to the source electrode is thus efficiently controlled. Further, in the present invention, formation of a recess structure enables normally-off characteristics.

(MOSFET)

FIG. 6 illustrates an example of a MOSFET as the semiconductor device of the present invention. The MOSFET in FIG. 6 is a trench MOSFET and provided with an n− type semiconductor layer 131 a, n+ type semiconductor layers 131 b and 131 c, a gate insulating film 134, a gate electrode 135 a, a source electrode 135 b, and a drain electrode 135 c.

On the drain electrode 135 c, the n+ type semiconductor layer 131 b having a thickness, for example, from 100 nm to 100 μm is formed. On the n+ type semiconductor layer 131 b, the n− type semiconductor layer 131 a having a thickness, for example, from 100 nm to 100 μm is formed. Further, on the n− type semiconductor layer 131 a, the n+ type semiconductor layer 131 c is formed. On the n+ type semiconductor layer 131 c, the source electrode 135 b is formed.

In the n− type semiconductor layer 131 a and the n+ type semiconductor layer 131 c, a plurality of trench grooves are formed that has a depth reaching at some point of the n− type semiconductor layer 131 a through the n+ semiconductor layer 131 c. The gate electrode 135 a is formed embedded in the trench grooves via the gate insulating film 134 having a thickness, for example, from 10 nm to 1 μm.

In an on state of the MOSFET in FIG. 6, when a voltage is applied between the source electrode 135 b and the drain electrode 135 c to give a voltage, positive to the source electrode 135 b, to the gate electrode 135 a, channel layers are formed on the sides of the n− type semiconductor layer 131 a and the electrons are injected into the n− type semiconductor layer 131 a to be turned on. In an off state, the voltage of the gate electrode is made 0 V, thereby no longer producing the channel layers. The n− type semiconductor layer 131 a is then filled with a depletion layer to be turned off.

FIGS. 7A to 7C illustrates part of a procedure of manufacturing the MOSFET in FIG. 6. For example, using a semiconductor structure as illustrated in FIG. 7A, an etching mask is provided in a predetermined region of the n− type semiconductor layer 131 a and the n+ type semiconductor layer 131 c. Using the etching mask as a mask, anisotropic etching is further performed by reactive ion etching or the like to form, as illustrated in FIG. 7B, trench grooves with a depth from the surface of the n+ type semiconductor layer 131 c to some point of the n− type semiconductor layer 131 a. Then, as illustrated in FIG. 7C, the gate insulating film 134 with a thickness, for example, from 50 nm to 1 μm is formed on the sides and the bottom of the trench grooves using known means, such as thermal oxidation, vacuum deposition, sputtering, and CVD. Then, using CVD, vacuum deposition, sputtering, or the like, a gate electrode material 135 a, such as polysilicon, for example, is formed on the trench grooves with a thickness equal to or less than that of the n− type semiconductor layer. Then, using known means, such as vacuum deposition, sputtering, and CVD, the source electrode 135 b is formed on the n+ type semiconductor layer 131 c and the drain electrode 135 c is formed on the n+ type semiconductor layer 131 b to manufacture a power MOSFET. Electrode materials for the source electrode and the drain electrode may be respective known electrode materials, and examples of the electrode materials include metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like.

The MOSFET thus obtained is even more excellent in withstand voltage compared with conventional trench MOSFETs. Although FIG. 6 illustrates the example of the trench vertical MOSFET, the present invention is not limited to this and is applicable to various forms of MOSFET. For example, the trench grooves in FIG. 6 may be formed deeper down to the bottom of the n− type semiconductor layer 131 a to reduce series resistance. FIG. 8 illustrates an example of a lateral MOSFET. The MOSFET in FIG. 8 is provided with an n− type semiconductor layer 131 a, a first n+ type semiconductor layer 131 b, a second n+ type semiconductor layer 131 c, a gate insulating film 134, a gate electrode 135 a, a source electrode 135 b, a drain electrode 135 c, a buffer layer 138, and a semi-insulating layer 139. As illustrated in FIG. 8, the n+ type semiconductor layers are embedded in the n− type semiconductor layer to enable better flow of a current compared with that in other lateral MOSFETs.

(SIT)

FIG. 9 illustrates an example of an SIT as the semiconductor device of the present invention. The SIT in FIG. 9 is provided with an n− type semiconductor layer 141 a, n+ type semiconductor layers 141 b and 141 c, gate electrodes 145 a, source electrodes 145 b, and a drain electrode 145 c.

On the drain electrode 145 c, the n+ type semiconductor layer 141 b having a thickness, for example, from 100 nm to 100 μm is formed. On the n+ type semiconductor layer 141 b, the n− type semiconductor layer 141 a having a thickness, for example, from 100 nm to 100 μm is formed. Further, on the n− type semiconductor layer 141 a, the n+ type semiconductor layer 141 c is formed. On the n+ type semiconductor layer 141 c, the source electrodes 145 b are formed.

In the n− type semiconductor layer 141 a, a plurality of trench grooves are formed that has a depth reaching at some point of the n− semiconductor layer 141 a through the n+ semiconductor layer 141 c. On the n− type semiconductor layer in the trench grooves, gate electrodes 145 a are formed.

In an on state of the SIT in FIG. 9, when a voltage is applied between the source electrodes 145 b and the drain electrode 145 c to give a voltage, positive to the source electrodes 145 b, to the gate electrodes 145 a, a channel layer is formed in the n− type semiconductor layer 141 a and the electrons are injected into the n− type semiconductor layer 141 a to be turned on. In an off state, the voltage of the gate electrode is made 0 V, thereby no longer producing the channel layers. The n− type semiconductor layer 141 a is then filled with a depletion layer to be turned off.

The SIT illustrated in FIG. 9 may be manufactured by known means. For example, using the semiconductor structure illustrated in FIG. 7A, in the same manner as the procedure of manufacturing an MOSFET in FIGS. 7A to 7C above, an etching mask is provided in a predetermined region of the n− type semiconductor layer 141 a and the n+ type semiconductor layer 141 c. Using the etching mask as a mask, anisotropic etching is performed by, for example, reactive ion etching or the like to form trench grooves with a depth from the surface of the n+ type semiconductor layer 141 c to some point of the n− type semiconductor layer 141 a. Then, by CVD, vacuum deposition, sputtering, or the like, a gate electrode material, such as polysilicon, for example, is formed on the trench grooves with a thickness equal to or less than that of the n− type semiconductor layer. Then, using known means, such as CVD, vacuum deposition, and sputtering, the source electrodes 145 b are formed on the n+ type semiconductor layer 141 c and the drain electrode 145 c is formed on the n+ type semiconductor layer 141 b to manufacture the SIT illustrated in FIG. 9.

Electrode materials for the source electrodes and the drain electrode may be respective known electrode materials, and examples of the electrode materials include metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like.

Although a p type semiconductor is not used in the above example, the present invention is not limited to such an example and a p type semiconductor may be used. FIGS. 10 to 16 illustrate examples using a p type semiconductor. These semiconductor devices may be manufactured in the manner same as that in the above example. The p type semiconductor may be of the material same as that for the n type semiconductor but containing a p type dopant, or may be different from that.

FIG. 10 illustrates a preferred example of a Schottky barrier diode (SBD) provided with an n− type semiconductor layer 101 a, an n+ type semiconductor layer 101 b, a p type semiconductor layer 102, an insulating layer 104, a Schottky electrode 105 a, and an ohmic electrode 105 b.

FIG. 11 illustrates a preferred example of a trench Schottky barrier diode (SBD) provided with an n− type semiconductor layer 101 a, an n+ type semiconductor layer 101 b, a p type semiconductor layer 102, a Schottky electrode 105 a, and an ohmic electrode 105 b. Such a trench SBD enables great reduction in the leakage current and great reduction in the on resistance while maintaining withstand voltage.

FIG. 12 illustrates a preferred example of a high electron mobility transistor (HEMT) provided with an n type semiconductor layer 121 a with a wide band gap, an n type semiconductor layer 121 b with a narrow band gap, an n+ type semiconductor layer 121 c, a p type semiconductor layer 123, a gate electrode 125 a, a source electrode 125 b, a drain electrode 125 c, and a substrate 129.

FIG. 13 illustrates a preferred example of a metal oxide semiconductor field effect transistor (MOSFET) provided with an n− type semiconductor layer 131 a, a first n+ type semiconductor layer 131 b, a second n+ type semiconductor layer 131 c, a p type semiconductor layer 132, a p+ type semiconductor layer 132 a, a gate insulating film 134, a gate electrode 135 a, a source electrode 135 b, and a drain electrode 135 c. The p+ type semiconductor layer 132 a may be a p type semiconductor layer and may be same as the p type semiconductor layer 132.

FIG. 14 illustrates a preferred example of a junction field effect transistor (JFET) provided with an n− type semiconductor layer 141 a, a first n+ type semiconductor layer 141 b, a second n+ type semiconductor layer 141 c, a p type semiconductor layer 142, gate electrodes 145 a, source electrodes 145 b, and the drain electrode 145 c.

FIG. 15 illustrates a preferred example of an insulated gate bipolar transistor (IGBT) provided with an n type semiconductor layer 151, an n− type semiconductor layer 151 a, n+ type semiconductor layers 151 b, a p type semiconductor layer 152, a gate insulating film 154, a gate electrode 155 a, emitter electrodes 155 b, and a collector electrode 155 c.

(LED)

FIG. 16 illustrates an example of a light emitting diode (LED) as the semiconductor device of the present invention. The semiconductor light emitting device in FIG. 16 is provided with an n type semiconductor layer 161 on a second electrode 165 b, and on the n type semiconductor layer 161, a light emitting layer 163 is laminated. Then, on the light emitting layer 163, a p type semiconductor layer 162 is laminated. On the p type semiconductor layer 162, a translucent electrode 167 is provided that transmits light produced by the light emitting layer 163. On the translucent electrode 167, a first electrode 165 a is laminated. The semiconductor light emitting device in FIG. 16 may be covered with a protective layer except for the electrode portions.

Examples of the material for the translucent electrode include conductive materials of oxide containing indium (In) or titanium (Ti) or the like. More specific examples include In₂O₃, ZnO, SnO₂, Ga₂O₃, TiO₂, and CeO₂, mixed crystal of two or more of them, those doped by them, or the like. Such a material is provided by known means, such as sputtering, to form a translucent electrode. After forming the translucent electrode, thermal annealing may be applied to make the translucent electrode transparent.

According to the semiconductor light emitting device in FIG. 16, where the first electrode 165 a is a cathode and the second electrode 165 b is an anode, a flow of current via both of them to the p type semiconductor layer 162, the light emitting layer 163, and the n type semiconductor layer 161 causes the light emitting layer 163 to emit light.

Examples of the materials for the first electrode and the second electrode include metal, such as Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Jr, Zn, In, Pd, Nd, and Ag, and alloys thereof, metal oxide conductive films, such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds, such as polyaniline, polythiophene, and polypyrrole, and mixtures thereof, or the like. A method of forming the electrodes is not particularly limited. The electrodes may be formed on the substrate in accordance with a method appropriately selected by considering suitability for the above material from printing process, wet process such as spraying and coating, physical process such as vacuum deposition, sputtering, and ion plating, chemical process such as CVD and plasma CVD, or the like.

FIG. 17 illustrates another embodiment of a light emitting device. In the light emitting device in FIG. 17, an n type semiconductor layer 161 is laminated on a substrate 169. A p type semiconductor layer 162, a light emitting layer 163, and part of the n type semiconductor layer 161 are notched to expose the n type semiconductor layer 161. On part of the exposed surface of the semiconductor layer, the second electrode 165 b is laminated.

EXAMPLE

Examples of the present invention are described below.

Example 1

1. Film Formation Apparatus

With reference to FIG. 18, a mist CVD apparatus 19 used in the present Example is described. The mist CVD apparatus 19 was provided with a susceptor 21 to place a substrate 20, carrier gas supply means 22 to supply a carrier gas, a flow regulating valve 23 to regulate a flow rate of the carrier gas discharged from the carrier gas supply means 22, a mist generator 24 to store a raw-material solution 24 a, a container 25 to keep water 25 a, an ultrasonic vibration transducer 26 mounted at a bottom of the container 25, a supply pipe 27 of a quartz pipe with an inner diameter of 40 mm, and a heater 28 placed surrounding the supply pipe 27. The susceptor 21 was made from quartz and had a surface to place the substrate 20 inclined from the horizontal plane. Both the supply pipe 27 and the susceptor 21 made from quartz inhibit mixing of impurities derived from the apparatus into the film formed on the substrate 20.

As the susceptor 21, the susceptor 51 illustrated in FIGS. 19A to 19B was used. The susceptor had a tilt angle of 45°, and the susceptor in the supply pipe was configured to have a total area of the substrate that, as illustrated in FIGS. 19A to 19B, gradually increased the susceptor region and gradually decreased the exhaust region. As illustrated in FIG. 20, the susceptor region was configured to be greater than the exhaust region.

2. Preparation of Raw-Material Solution

An aqueous solution of gallium bromide and germanium oxide was prepared at an atomic ratio of germanium to gallium of 1:0.05. At this point, a 48% hydrobromic acid solution was contained at a volume ratio of 10%. In Condition 1, the concentration of germanium oxide was 5.0×10⁻³ mol/L.

The raw-material solution 24 a was stored in the mist generator 24.

3. Film Formation Preparation

Then, on the susceptor 21, a c-plane sapphire substrate in a 10 mm square with a thickness of 600 μm was placed as the substrate 20. The heater 28 was activated to raise a temperature in the supply pipe 27 to 500° C. The flow regulating valve 23 was then opened to supply a carrier gas from the carrier gas supply means 22 into the supply pipe 27. After the carrier gas sufficiently substituted for the atmosphere in the supply pipe 27, the flow rate of the carrier gas was regulated at 5 L/min. As the carrier gas, an oxygen gas was used.

4. Film Formation

The ultrasonic vibration transducer 26 was then vibrated at 2.4 MHz. The vibration propagated through the water 25 a to the raw-material solution 24 a, thereby microparticulating the raw-material solution 24 a to produce raw material microparticles.

The raw material microparticles were introduced to the supply pipe 27 by the carrier gas to be reacted in the supply pipe 27. A film was formed on the substrate 20 by the CVD reaction on the film formation surface of the substrate 20.

5. Evaluation

A phase of the film thus obtained was identified. The identification was carried out by 2θ/ω scanning at an angle from 15 to 95 degrees using an XRD diffractometer. The measurement was performed using CuK α rays. As a result, the crystalline semiconductor film thus obtained had a film thickness of 3.5 μm.

For evaluation of the electrical characteristics of the film thus obtained, the Hall effect was measured by the van der pauw method. The measurement environment was at room temperature and a frequency of the applied magnetic field at 50 mHz. As a result, the carrier concentration was 4.33×10¹⁸ (1/cm²) and the mobility was 19 (cm²/V·s).

Example 2

Respective raw-material solutions of gallium bromide and germanium oxide were prepared at an atomic ratio of germanium to gallium of 1E-7, 1E-6, 8E-5, 4E-4, 2E-3, 1E-2, 2E-1, and 8E-1. At this point, a 48% hydrobromic acid solution was contained at a volume ratio of 10%. Films were formed in the film formation conditions same as those in Example 1 for quantitative analysis of the concentration of impurities using SIMS, the type of incident ion of oxygen, and output of 3 kV and 200 nA. The results are illustrated in FIG. 21. As illustrated in FIG. 21, it was found that a dopant content ratio in the liquid and a doping amount in the crystal film have a correlation and adjustment of the dopant content ratio in the liquid facilitates control of the doping concentration in the film to be formed.

Example 3

In the same manner as in Condition 1 other than changing the concentration of germanium oxide to 1.0×10⁻³ mol/L instead of 5.0×10⁻³ mol/L, a germanium doped α-Ga₂O₃ film was formed on the c-plane sapphire substrate as the n+ semiconductor layer. On the film thus formed, an undoped α-Ga₂O₃ film was then formed as the n− semiconductor layer. The n− semiconductor layer was formed in the same manner as above other than doping was not performed. The crystalline semiconductor film thus obtained had a film thickness of 7.6 μm and the film formation time was 180 minutes. Then, as illustrated in FIG. 22, part of the n− semiconductor layer 101 a was etched, followed by providing the ohmic electrode 105 b of Ti on the n+ semiconductor layer 101 b and the Schottky electrode 105 a on the n− semiconductor layer 101 a by sputtering to fabricate an SBD.

The SBD thus obtained was subjected to SIMS analysis (Cs, 3 kV, 200 nA, Ap 16%, Raster 400). The results are illustrated in FIG. 23. As clearly seen from FIG. 23, germanium was not contained up to around 1500 seconds past in the sputtering time on the abscissa, and from 1500 seconds to 4000 seconds approximately, germanium was uniformly contained and the n+ type semiconductor layer and the n− type semiconductor layer were formed well.

Example 4

An aqueous solution of gallium bromide and tetraethyl orthosilicate was prepared at a ratio of an amount of substance of 100:1. At this point, a 48% hydrobromic acid solution was contained at a volume ratio of 10%. The concentration of silicon bromide was 1.0×10⁻³ mol/L. In the conditions where a film formation temperature was 500° C., the carrier gas was nitrogen, and a flow rate was 5 L/min, a film was formed. The film was formed in the same manner as in Example 1 in the other film formation conditions. The film thus obtained was subjected to phase identification by 2θ/ω scanning at an angle from 15 to 95 degrees using an XRD diffractometer. The measurement was performed using CuK α rays. As a result, the film thus obtained was α-Ga₂O₃. The film had a thickness of 2.5 μm.

The film thus obtained was subjected to SIMS analysis (Cs, 3 kV, 200 nA, Ap 16%, Raster 400). The results are illustrated in FIG. 24. It is found that silicon was doped well. germanium was not contained up to around 1500 seconds past in the sputtering time on the abscissa, and from 1500 seconds to 4000 seconds approximately, germanium was uniformly contained and the n+ type semiconductor layer and the n− type semiconductor layer were formed well. The electrical characteristics or the like exhibited performance equivalent to that in Example 1 where germanium is contained.

Example 5

A crystalline semiconductor film was formed in the same manner as in Example 3. After film formation, the crystalline semiconductor film was peeled off from the substrate due to ultrasonic vibration. The film thus obtained was subjected to phase identification by 2θ/ω scanning at an angle from 15 to 95 degrees using an XRD diffractometer. The measurement was performed using CuK α rays. As a result, the film thus obtained was α-Ga₂O₃. The film had a thickness of 7.6 μm, and the film formation time was 180 minutes.

The free-standing film thus obtained was subjected to structure evaluation using an X-ray diffractometer. As a result of X-ray diffraction, FIG. 25 illustrates an X-ray diffraction image. As clearly seen from FIG. 25, there is no diffraction spot for the substrate and thus the film is understood as a free-standing film.

Example 6

As illustrated in FIG. 26, from a free-standing film 171 obtained in Example 5, an SBD was fabricated using tungsten as a Schottky electrode 175 a and indium as an ohmic electrode 175 b. The SBD thus obtained was subjected to current-voltage characteristics evaluation. The results are illustrated in FIG. 27.

Example 7

In the same manner as in Example 1, a crystalline semiconductor film was formed for a long formation time. The film thus obtained was subjected to phase identification by 2θ/ω scanning at an angle from 15 to 95 degrees using an XRD diffractometer. The measurement was performed using CuK α rays. As a result, the film thus obtained was α-Ga₂O₃. The film had a thickness of 50 μm, and the film thickness of 50 μm resulted in no longer a film but sheet-like.

Example 8

In the same manner as in Example 1, a crystalline semiconductor film was formed. The film thus obtained was subjected to phase identification by 2.theta./.omega. scanning at an angle from 15 to 95 degrees using an XRD diffractometer. The measurement was performed using CuK α rays. As a result, the film thus obtained was α-Ga₂O₃. The film had a thickness of 1.9 μm. Directly using the film thus obtained, as illustrated in FIG. 28, a MESFET was fabricated. The MESFET in FIG. 28 was provided with a gate electrode 185 a, a source electrode 185 b, a drain electrode 185 c, an n type semiconductor layer 181, and a substrate 189. The n type semiconductor layer 181 was α-Ga₂O₃, where the gate electrode 185 a was made from platinum (Pt) and the source electrode 185 b and the drain electrode 185 c were formed from titanium (Ti)-gold (Au) alloy. FIG. 29 illustrates the DC characteristics of the MESFET thus fabricated. As clearly seen from FIG. 29, almost no leakage current was found, and particularly, a result of approximately 0.5 nA at a gate voltage of −25 V was obtained. The current reached 519 μA at a gate voltage of 1 V, so that the on-off ratio was a relatively high value of 10⁶.

Example 9

9-1. Film Formation Apparatus

With reference to FIG. 30, a mist CVD apparatus 1 used in the present Example is described. The mist CVD apparatus 1 was provided with a carrier gas source 2 a to supply a carrier gas, a flow regulating valve 3 a to regulate a flow rate of the carrier gas discharged from the carrier gas source 2 a, a dilution carrier gas source 2 b to supply a dilution carrier gas, a flow regulating valve 3 b to regulate a flow rate of the dilution carrier gas discharged from the dilution carrier gas source 2 b, a mist generator 4 to store a raw-material solution 4 a, a container 5 to keep water 5 a, an ultrasonic vibration transducer 6 mounted at a bottom of the container 5, a film formation chamber 7, a supply pipe 9 connecting the mist generator 4 to the film formation chamber 7, a hot plate 8 placed in the film formation chamber 7, and an exhaust outlet 11 to exhaust mist, droplets, and exhaust gas after thermal reaction. On the hot plate 8, a substrate 10 was placed.

9-2. Preparation of Raw-Material Solution

Gallium bromide and germanium oxide were mixed to water to prepare an aqueous solution at an atomic ratio of germanium to gallium of 1:0.01. At this point, hydrobromic acid was contained at a volume ratio of 10% to make a raw-material solution.

9-3. Film Formation Preparation

The raw-material solution 4 a obtained in 2. above was stored in the mist generator 4. Then, a 4-inch sapphire substrate was placed on the hot plate 8 as the substrate 10. The hot plate 8 was activated to raise a temperature in the film formation chamber 7 to 550° C. The flow regulating valves 3 a and 3 b were then opened to supply a carrier gas from carrier gas supply means 2 a and 2 b as the carrier gas sources into the film formation chamber 7. After the carrier gas sufficiently substituted for the atmosphere in the film formation chamber 7, the flow rate of the carrier gas was regulated at 5.0 L/min. and the flow rate of the dilution carrier gas was regulated at 0.5 L/min. As the carrier gas, oxygen was used.

9-4. Film Formation

The ultrasonic vibration transducer 6 was then vibrated at 2.4 MHz. The vibration propagated through the water 5 a to the raw-material solution 4 a, thereby atomizing the raw-material solution 4 a to produce mist 4 b. The mist 4 b was introduced to the film formation chamber 7 through the supply pipe 9 by the carrier gas. The mist was thermally reacted in the film formation chamber 7 at 550° C. under atmospheric pressure to form an n+ layer on the substrate 10. As the second layer, an n⁻ layer was formed using a raw-material solution same as that for the first layer other than not using germanium oxide and in the conditions same as those in the first layer. The film formation time was 4 hours and 30 minutes.

In addition, using the mist CVD apparatus in FIG. 18, the second layer was regrown in the conditions same as above. The film formation time was 120 minutes. The crystalline semiconductor film had a film thickness of 11.9 μm in total, where the n+ layer had a film thickness of 3.8 μm and the n⁻ layer had a film thickness of 8.1 μm. The phases of the films thus obtained were identified using an XRD diffractometer, and all the films thus obtained were α-Ga₂O₃.

9-5. Electrode Formation

After the sapphire substrate was peeled off from the α-Ga₂O₃ film, gold as a Schottky electrode and Ti/Au as an ohmic electrode were formed by the vapor deposition, respectively on the n⁻ layer and the n⁺ layer to fabricate an SBD.

9-6. Evaluation

The SBD thus obtained was subjected to current-voltage characteristics evaluation. FIG. 31 illustrates the results in a forward direction, and FIG. 32 illustrates the results in a reverse direction. As clearly seen from the results, the electrical characteristics of the semiconductor were excellent, and particularly, the withstand voltage in the reverse bias was more than 300 V. It is thus found that the product of the present invention has good diode characteristics.

Example 10

10-1. Film Formation Apparatus

In the same manner as in Example 9, the film formation apparatus illustrated in FIG. 30 was used.

10-2. Preparation of Raw-Material Solution (for Buffer Layer)

Hydrochloric acid was contained at a volume ratio of 1.5% in a 0.05 M aqueous iron-acetyl acetylacetonato solution to make a raw-material solution for a buffer layer.

10-3. Film Formation Preparation

The raw-material solution 4 a for a buffer layer obtained in 10-2. above was stored in the mist generator 4. A sapphire substrate was then placed on the hot plate 8 as the substrate 10. The hot plate 8 was activated to raise a temperature of the heater to 550° C. The flow regulating valves 3 a and 3 b were then opened to supply a carrier gas from the carrier gas supply means 2 a and 2 b as the carrier gas sources into the film formation chamber 7. After the atmosphere in the film formation chamber 7 was sufficiently purged with the carrier gas, the flow rate of the carrier gas was regulated at 2.0 L/min. and the flow rate of the dilution carrier gas was regulated at 0.5 L/min. As the carrier gas, nitrogen was used.

10-4. Formation of Buffer Layer

The ultrasonic vibration transducer 6 was then vibrated at 2.4 MHz. The vibration propagated through the water 5 a to the raw-material solution 4 a, thereby atomizing the raw-material solution 4 a to produce mist 4 b. The mist 4 b was introduced to the film formation chamber 7 through the supply pipe 9 by the carrier gas. The mist 4 b was thermally reacted in the film formation chamber 7 at 550° C. under atmospheric pressure to form a buffer layer on the substrate 10. The film formation time was 30 minutes.

10-5. Preparation of Raw-Material Solution

A 0.05 M aqueous gallium bromide solution was prepared. At this point, hydrobromic acid was contained at a volume ratio of 20% and tin bromide was further added at 8 atom % of tin to gallium to make a raw-material solution.

10-6. Film Formation Preparation

The raw-material solution 4 a obtained in 10-5. above was stored in the mist generator 4. A sapphire substrate with a buffer layer was then placed on the hot plate 8 as the substrate 10. The hot plate 8 was activated to raise a temperature of the heater to 500° C. The flow regulating valves 3 a and 3 b were then opened to supply a carrier gas from the carrier gas supply means 2 a and 2 b as the carrier gas sources into the film formation chamber 7. After the atmosphere in the film formation chamber 7 was sufficiently purged with the carrier gas, the flow rate of the carrier gas was regulated at 1.0 L/min. and the flow rate of the dilution carrier gas was regulated at 0.5 L/min. As the carrier gas, a forming gas (H₂:N₂=5:95) was used.

10-7. Film Formation

The ultrasonic vibration transducer 6 was then vibrated at 2.4 MHz. The vibration propagated through the water 5 a to the raw-material solution 4 a, thereby atomizing the raw-material solution 4 a to produce mist 4 b. The mist 4 b was introduced to the film formation chamber 7 through the supply pipe 9 by the carrier gas. The mist 4 b was thermally reacted in the film formation chamber 7 at 550° C. under atmospheric pressure to form a buffer layer on the substrate 10. The film formation time was 300 minutes.

10-8. Peeled Film

The buffer layer was dissolved by concentrated hydrochloric acid to peel off the film obtained in 10-4. above from the substrate. The film thus obtained had a film thickness of 4 μm. The film was identified using an X-ray diffractometer as α-Ga₂O₃. FIG. 33 illustrates the results of XRD. As clearly seen from FIG. 33, there are no peak of the sapphire substrate and no peak of the buffer layer to find that the film was a clean peeled film of α-Ga₂O₃. The α-Ga₂O₃ film thus obtained was cut out to 1 mm square using a laser. FIG. 34 illustrates a photograph of the α-Ga₂O₃ film before cut out, and FIG. 35 illustrates the α-Ga₂O₃ film after cut out. As clearly seen from FIG. 34, the peeled film thus obtained had a film surface area of 5 mm square or more. As clearly seen from FIG. 35, the α-Ga₂O₃ film of good quality in 1 mm square was cut out.

INDUSTRIAL APPLICABILITY

The crystalline semiconductor film and the sheet like object of the present invention can be used in any field, such as semiconductors (e.g., compound semiconductor electronic devices, etc.), electronic components and electric device components, optical and electronic photography related devices, and industrial components. They are excellent in semiconductor properties and particularly useful for semiconductor devices.

REFERENCE SIGNS LIST

1 Mist CVD Apparatus

2 a Carrier Gas Source

2 b Dilution Carrier Gas Source

3 a Flow Regulating Valve

3 b Flow Regulating Valve

4 Mist Generator

4 a Raw-Material Solution

4 b Mist

5 Container

5 a Water

6 Ultrasonic Vibration Transducer

7 Film Formation Chamber

8 Hot Plate

9 Supply Pipe

10 Substrate

11 Exhaust Outlet

19 Mist CVD Apparatus

20 Substrate

21 Susceptor

22 Carrier Gas Supply Means

23 Flow Regulating Valve

24 Mist Generator

24 a Raw-Material Solution

25 Container

25 a Water

26 Ultrasonic Vibration Transducer

27 Film Formation Chamber

28 Heater

51 Susceptor

52 Mist Acceleration Means

53 Substrate Holder

54 Support Unit

55 Supply Pipe

61 Substrate-Susceptor Region

62 Exhaust Region

101 a n− Type Semiconductor Layer

101 b n+ Type Semiconductor Layer

102 p Type Semiconductor Layer

103 Semi-Insulating Layer

104 Insulating Layer

105 a Schottky Electrode

105 b Ohmic Electrode

109 Substrate

111 a n− Type Semiconductor Layer

111 b n+ Type Semiconductor Layer

114 Semi-Insulating Layer

115 a Gate Electrode

115 b Source Electrode

115 c Drain Electrode

118 Buffer Layer

121 a n Type Semiconductor Layer with Wide Band Gap

121 b n Type Semiconductor Layer with Narrow Band Gap

121 c n+ Type Semiconductor Layer

123 p Type Semiconductor Layer

124 Semi-Insulating Layer

125 a Gate Electrode

125 b Source Electrode

125 c Drain Electrode

128 Buffer Layer

129 Substrate

131 a n− Type Semiconductor Layer

131 b First n+ Type Semiconductor Layer

131 c Second n+ Type Semiconductor Layer

132 p Type Semiconductor Layer

134 Gate Insulating Film

135 a Gate Electrode

135 b Source Electrode

135 c Drain Electrode

138 Buffer Layer

139 Semi-Insulating Layer

141 a n− Type Semiconductor Layer

141 b First n+ Type Semiconductor Layer

141 c Second n+ Type Semiconductor Layer

142 p Type Semiconductor Layer

145 a Gate Electrode

145 b Source Electrode

145 c Drain Electrode

151 n Type Semiconductor Layer

151 a n− Type Semiconductor Layer

151 b n+ Type Semiconductor Layer

152 p Type Semiconductor Layer

154 Gate Insulating Film

155 a Gate Electrode

155 b Emitter Electrode

155 c Collector Electrode

161 n Type Semiconductor Layer

162 p Type Semiconductor Layer

163 Light Emitting Layer

165 a First Electrode

165 b Second Electrode

167 Translucent Electrode

169 Substrate

171 α-Ga₂O₃ layer

175 a Tungsten Electrode

175 b Indium Electrode

181 n Type Semiconductor Layer

185 a Gate Electrode

185 b Source Electrode

185 c Drain Electrode

189 Substrate 

1. A semiconductor device comprising: a crystalline semiconductor film that comprises a corundum structured oxide semiconductor as a major component, the corundum structured oxide semiconductor that comprises an oxide comprising gallium and/or indium, and a thickness of the crystalline semiconductor film that is 1 μm or more; a Schottky electrode, the Schottky electrode that is arranged on the crystalline semiconductor film.
 2. The semiconductor device of claim 1, wherein the thickness of the crystalline semiconductor film is 7.6 μm or more.
 3. The semiconductor device of claim 1, wherein the crystalline semiconductor film includes a dopant.
 4. The semiconductor device of claim 1, wherein a surface area of the crystalline semiconductor film is 9 mm² or more.
 5. The semiconductor device of claim 1, wherein the corundum structured oxide semiconductor further includes a metal selected from among Al, Fe, Cr, V, Rh, Ni and Co.
 6. The semiconductor device of claim 1, wherein the crystalline semiconductor film includes gallium at an atomic ratio of 0.5 or more in the metal elements included in the crystalline semiconductor film.
 7. The semiconductor device of claim 1, further including: an Ohmic electrode, wherein the Ohmic electrode is arranged on the crystalline semiconductor film.
 8. The semiconductor device of claim 7, wherein the Schottky electrode is arranged at a first side of the crystalline semiconductor film, and the Ohmic electrode is arranged at a second side of the crystalline semiconductor film, wherein the second side is an opposite side to the first side.
 9. The semiconductor device of claim 1, wherein the crystalline semiconductor film includes a first layer and a second layer, and wherein the first layer is an n− type semiconductor layer and the second layer is an n+ type semiconductor layer.
 10. The semiconductor device of claim 1, further including: an insulating layer, and at least a part of the insulating layer is arranged between the crystalline semiconductor film and the Schottky electrode.
 11. The semiconductor device of claim 1, wherein the semiconductor device is a vertical device.
 12. The semiconductor device of claim 1, wherein the semiconductor device is a power device.
 13. A semiconductor device comprising: a crystalline semiconductor film that comprises a corundum structured oxide semiconductor as a major component, the corundum structured oxide semiconductor that comprises an oxide comprising gallium and/or indium, and a thickness of the crystalline semiconductor film that is 1 μm or more; a Schottky electrode that is arranged on the crystalline semiconductor film, the Schottky electrode that comprises at least one selected from among Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Ir, Zn, In, Pd, Nd, and Ag, and alloys thereof, tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), polyaniline, polythiophene, and polypyrrole, and mixture thereof.
 14. The semiconductor device of claim 13, wherein the Schottky electrode includes at least one selected from among Al, Mo, Co, Zr, Sn, Nb, Fe, Cr, Ta, Ti, Au, Pt, V, Mn, Ni, Cu, Hf, W, Ir, Zn, In, Pd, Nd, Ag, and alloys thereof.
 15. The semiconductor device of claim 13, wherein the corundum structured oxide semiconductor further includes a metal selected from among Al, Fe, Cr, V, Rh, Ni and Co.
 16. The semiconductor device of claim 13, wherein the crystalline semiconductor film includes gallium at an atomic ratio of 0.5 or more in the metal elements included in the crystalline semiconductor film.
 17. The semiconductor device of claim 13, wherein the crystalline semiconductor film includes a first layer and a second layer, and wherein the first layer is an n− type semiconductor layer and the second layer is an n+ type semiconductor layer.
 18. The semiconductor device of claim 13, wherein a surface area of the crystalline semiconductor film is 9 mm² or more.
 19. The semiconductor device of claim 13, further including: an Ohmic electrode, wherein the Ohmic electrode is arranged on the crystalline semiconductor film.
 20. The semiconductor device of claim 19, wherein the Schottky electrode is arranged at a first side of the crystalline semiconductor film, and the Ohmic electrode is arranged at a second side of the crystalline semiconductor film, and wherein the second side is an opposite side to the first side. 